Green’s function-based defect identification in InAs-InAs1-xSbx strained layer superlattices

Quantitative Study of Compositional Uniformity and Interfacial Strain in InAs/InAs1-xSbx Type-II Superlattices

For infrared photo-detection in mid-wavelength and long-wavelength range, mercury cadmium telluride (MCT) semiconductor alloys remain the most widely used material system despite its major disadvantages of intrinsic Auger recombination and small effective mass. Type-II superlattices (T2SL) have been proposed as possible alternatives to MCT because they may overcome these problems by flexible an...

Electronic structure of strained-layer AlAs/InAs (001) superlattices.

Observation of coherent electron transport in self-catalysed InAs and InAs1−xSbx nanowires grown on silicon

We report the observation of phase coherent transport in catalyst-free InAs and InAs1−xSbx nanowires grown by molecular beam epitaxy on silicon (111) substrates. We investigate three different methods to gain information on the phase coherence length of the nanowires: first through the study of universal conductance fluctuations as a function of both magnetic field and gate voltage and then thr...

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaS...

STUDY OF MINORITY CARRIER LIFETIMES IN VERY LONG-WAVE INFRARED STRAINED-LAYER InAs/GaInSb SUPERLATTICES (POSTPRINT)

Significantly improved carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SL structure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is an order-of-magni...